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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. CH3904M1PT CURRENT 0.2 Ampere FEATURE * Small surface mounting type. (FBPT-723) * Low current (Max.=200mA). * Suitable for high packing density. * Low voltage (Max.=40V) . * High saturation current capability. * Voltage controlled small signal switch. 0.50.05 1.20.05 FBPT-723 1.20.05 CONSTRUCTION * NPN Switching Transistor 0.050.04 0.840.05 0.320.05 0.15(REF.) 0.47(REF.) (3) CIRCUIT 1 3 0.280.05 (2) (1) 0.23(REF.) 0.220.05 2 0.250.05 Dimensions in millimeters FBPT-723 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current DC peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 CONDITIONS open emitter open base open collector - - - - - - - -65 - -65 MIN. MAX. 60 40 6 200 200 100 150 +150 150 +150 V V V mA mA mA mW C C C 2006-07 UNIT RATING CHARACTERISTIC CURVES ( CH3904M1PT ) CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 30 V IC = 0; VEB = 6 V VCE = 1 V; note 1 IC = 0.1 mA IC = 1 mA IC = 10 mA IC = 50 mA IC = 100 mA VCEsat VBEsat Cc Ce fT F collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency noise gure IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 5 mA IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 5 mA IE = ie = 0; VCB = 5 V; f = 1 MHz IC = ic = 0; VBE = 500 mV; f = 1 MHz IC = 10 mA; VCE = 20 V; f = 100 MHz IC = 100 A; VCE = 5 V; RS = 1 k; f = 10 Hz to 15.7 kHz 60 80 100 60 30 - - 650 - - - 300 - - - 300 - - 200 300 850 950 4 8 - 5 mV mV mV mV pF pF MHz dB - - MIN. MAX. 50 50 UNIT nA nA Switching times (between 10% and 90% levels); ton td tr toff ts tf Note 1. Pulse test: tp 300 s; 0.02. turn-on time delay time rise time turn-off time storage time fall time ICon = 10 mA; IBon = 1 mA; IBoff = -1 mA - - - - - - 65 35 35 240 200 50 ns ns ns ns ns ns RATING CHARACTERISTIC CURVES ( CH3904M1PT ) Figure 1. Power Derating COLLECTOR-EMITTER SATURATION VOLTAGE, VCEsat(V) 200 1.0 Figure 2. Collector-Emitter saturation voltage Characteristic Ic/IB =10 POWER DISSIPATION, PD(mW) 160 120 0.1 80 40 0 0 20 40 60 80 100 120 140 160 180 200 0 0.1 1 10 100 1000 AMBIENT TEMPERATURE, TA(OC) COLLECTOR CURRENT, IC(mA) Figure 3. DC Current Gain 1000 VCE=10V Ta = 125oC DC CURRENT GAIN, hFE 100 Ta = -25oC Ta = 25oC 10 1 0.1 1.0 10 100 1000 COLLECTOR CURRENT, IC(mA) |
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